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Development and Optimization of Next Generation Optoelectronic and Memory Devices using Oxide Semiconductors and their Integration with 2D Semiconductors

January 9 @ 11:00 am - 12:00 pm

There is a growing need for scalable, robust, economic, integrated electronic/optoelectronic devices for optical communication, optical memory, spectroscopy and strategic applications. These demands are difficult to be achieved by existing rigid technology hence new set of materials like oxide semiconductors and 2D materials have gained increased scientific and industrial interest in the last decade as an alternative to traditional solid-state solutions. An extensive research work is going around the world at various research laboratories and R&D industries to meet the demands of the mankind for a smart and secured living environment. Integration of these different classes of semiconductors has potential for the development of new technologies towards the fabrication of next generation optoelectronic devices. In this talk, I will discuss about various oxide semiconductors (ZnO, doped-ZnO system, ZnCr2O4, CuO) and their optoelectronic properties. Fabrication and characterization of various optoelectronic devices such as white LEDs, NIR lasing, near UV and Deep UV photodiodes, phototransistors, Solar blind photodetectors and optical memory will be discussed. The device performance enhancement strategies like hot carrier generation using decay of surface plasmons and inter-band transitions will be covered. Finally, the integration of developed oxide semiconductors with 2 D semiconductors for new functionalities such as lasing etc. will be discussed.Discipline/Coordinating Entity: Electrical Engineering

Details

Date:
January 9
Time:
11:00 am - 12:00 pm
Event Category:

Venue

5/202